Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
188 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.82mm
Width:
15.75mm
Length:
10.28mm
Maximum Drain Source Resistance:
13 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
76 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
13mOhm @ 76A, 10V
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTP6410ANG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2305694
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
188W (Tc)
standardLeadTime:
15 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4500 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTP6410
ECCN:
EAR99
