N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 onsemi FCP190N60_GF102

FCP190N60_GF102 N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.672mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
57 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
208 W
Series:
SuperFET II
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.215mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
199 mΩ
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 20 A 600 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is FCP190N60_GF102. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.672mm wide. The product offers single transistor configuration. Priced to Clear Options - yes. It has a maximum of 600 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 57 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. The product superfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.215mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 199 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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FCP190N60_GF102, N-Channel SuperFET II MOSFET 600V, 20.2A, 199mOhm(Technical Reference)

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