Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Series:
UniFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
7.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.25 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
1.25Ohm @ 2.75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
730 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET-II™
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDU7
ECCN:
EAR99
