Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.1mm
Width:
2.3mm
Length:
6.6mm
Minimum Gate Threshold Voltage:
2V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
185 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
185mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FQU11P06TU Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1053688
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
2.5W (Ta), 38W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
IPAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQU11P06
ECCN:
EAR99
