Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.7 nC @ 5 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
2.5 W
Series:
QFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
6.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
180 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
180mOhm @ 5A, 10V
title:
FQU13N10LTU
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FQU13N10LTU Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/1053609
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
2.5W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
520 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Supplier Device Package:
IPAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQU13N10
ECCN:
EAR99
