Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
420 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
420mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bag
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
980 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
IPAK/TP
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDDP0
ECCN:
EAR99
