Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
1.43 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.4V
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
54 Ω
Package Type:
SC-70
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
10.4Ohm @ 50mA, 4V
edacadModel:
3LP01M-TL-H Models
Gate Charge (Qg) (Max) @ Vgs:
1.43 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
edacadModelUrl:
/en/models/2748069
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
7.5 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
MCP
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
3LP01
ECCN:
EAR99
