Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
16.12mm
Width:
4.9mm
Length:
10.63mm
Maximum Drain Source Resistance:
1.2 Ω
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.1 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1107 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7.1A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDF06
ECCN:
EAR99
This is N-Channel MOSFET 7.1 A 600 V 3-Pin TO-220FP manufactured by onsemi. The manufacturer part number is NDF06N60ZG. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 31 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 16.12mm. Furthermore, the product is 4.9mm wide. Its accurate length is 10.63mm. It provides up to 1.2 ω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 1.2ohm @ 3a, 10v. The maximum gate charge and given voltages include 47 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 35w (tc). The product's input capacitance at maximum includes 1107 pf @ 25 v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 7.1a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndf06, a base product number of the product. The product is designated with the ear99 code number.
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