Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.1 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.8mm
Width:
0.95mm
Length:
1.7mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
760 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-89, SOT-490
Rds On (Max) @ Id, Vgs:
360mOhm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTE4151PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/687077
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
313mW (Tj)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
156 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-89-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
760mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTE4151
ECCN:
EAR99
This is P-Channel MOSFET 760 mA 20 V 3-Pin SOT-523 manufactured by onsemi. The manufacturer part number is NTE4151PT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 2.1 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 310 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 0.95mm wide. Its accurate length is 1.7mm. It provides up to 1 ω maximum drain source resistance. The package is a sort of sot-523 (sc-89). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 760 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-89, sot-490. It has a maximum Rds On and voltage of 360mohm @ 350ma, 4.5v. The maximum gate charge and given voltages include 2.1 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±6v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 313mw (tj). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 156 pf @ 5 v. sc-89-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 760ma (tj). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nte4151, a base product number of the product. The product is designated with the ear99 code number.
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