Dual P-Channel MOSFET, 7 A, 30 V, 8-Pin SOIC onsemi FDS4935A

FDS4935A Dual P-Channel MOSFET, 7 A, 30 V, 8-Pin SOIC onsemi
FDS4935A
onsemi

Product Information

Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
15 nC @ 5 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
23 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 5V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDS4935A Models
Current - Continuous Drain (Id) @ 25°C:
7A
edacadModelUrl:
/en/models/965321
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1233pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS49
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual P-Channel MOSFET 7 A 30 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS4935A. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 15 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 23 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 23mohm @ 7a, 10v. The maximum gate charge and given voltages include 21nc @ 5v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 7a. The product is available in 2 p-channel (dual) configuration. The onsemi's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 1233pf @ 15v. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds49, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab 02/Aug/2020(PCN Assembly/Origin)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDS4935A(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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