Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
MLP8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
42 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.5A, 10V
title:
FDMC2523P
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDMC2523P Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1154601
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
42W (Tc)
standardLeadTime:
21 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
270 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 10 V
Supplier Device Package:
8-MLP (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC2523
ECCN:
EAR99
