Maximum Continuous Drain Current:
170 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.8 nC @ 10 V
Channel Type:
N
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6 Ω
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
5Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
1.8 nC @ 10 V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
BSS123 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/244348
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
14 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
200mA
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSS123
ECCN:
EAR99
