Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
110 nC @ 20 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.4mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Maximum Drain Source Resistance:
25 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
25mOhm @ 56A, 10V
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
HUF75639P3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/965374
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75639
ECCN:
EAR99
