Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
94 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
53mOhm @ 4.4A, 10V
title:
FDMS86263P
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDMS86263P Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/4780839
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3905 pF @ 75 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta), 22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86263
ECCN:
EAR99
