Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Package Type:
Power 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V, 21 nC @ 10 V
Channel Type:
N
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.9 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
28 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 12A, 10V
edacadModel:
FDMC8030 Models
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
12A
edacadModelUrl:
/en/models/3163281
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1975pF @ 20V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-Power33 (3x3)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC80
ECCN:
EAR99
