Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Minimum Gate Threshold Voltage:
0.3V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
2N7000TA Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/976605
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
400mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 25 V
standardLeadTime:
15 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
200mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7000
ECCN:
EAR99
