Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V, 25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.75mm
Width:
3.15mm
Length:
3.15mm
Maximum Drain Source Resistance:
72 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
52mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1258 pF @ 30 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS5116
ECCN:
EAR99
