Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
11 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Maximum Gate Source Voltage:
-15 V, +15 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
65 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
65mOhm @ 9A, 5V
title:
NTD18N06LT4G
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTD18N06LT4G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/921546
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.1W (Ta), 55W (Tj)
Qualification:
-
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
675 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 5 V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD18
ECCN:
EAR99
