Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.82 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1.1V
Height:
0.8mm
Width:
1.6mm
Length:
0.8mm
Maximum Drain Source Resistance:
9.5 Ω
Package Type:
SC-75
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
915 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-75, SOT-416
Rds On (Max) @ Id, Vgs:
230mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.82 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTA4153NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
edacadModelUrl:
/en/models/687078
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300mW (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
110 pF @ 16 V
standardLeadTime:
29 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-75, SOT-416
Current - Continuous Drain (Id) @ 25°C:
915mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTA4153
ECCN:
EAR99
