Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14.3 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.57mm
Width:
3.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
185 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
185mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14.3 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTF2955T1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1749071
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
492 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTF2955
ECCN:
EAR99
