N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK onsemi NTD24N06LT4G

NTD24N06LT4G N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK onsemi
NTD24N06LT4G
NTD24N06LT4G
ET21455640
onsemi

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
16 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
-15 V, +15 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
45 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
45mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.36W (Ta), 62.5W (Tj)
standardLeadTime:
35 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1140 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
24A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD24
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 24 A 60 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is NTD24N06LT4G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 62.5 w maximum power dissipation. It features a maximum gate source voltage of -15 v, +15 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 45 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 45mohm @ 10a, 5v. The maximum gate charge and given voltages include 32 nc @ 5 v. The typical Vgs (th) (max) of the product is 2v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.36w (ta), 62.5w (tj). It has a long 35 weeks standard lead time. The product's input capacitance at maximum includes 1140 pf @ 25 v. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 24a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntd24, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev 18/Dec/2022(PCN Assembly/Origin)
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NTD24N06L(Datasheets)
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onsemi RoHS(Environmental Information)

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