Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
46 A
Mounting Type:
Through Hole
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.084 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
Rds On (Max) @ Id, Vgs:
43mOhm @ 20A, 18V
Detailed Description:
N-Channel 900V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 450V
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs:
87nC @ 15V
Supplier Device Package:
TO-247-4L
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-4
Power Dissipation (Max):
221W (Tc)
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Manufacturer:
ON Semiconductor
