Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
162 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.00225 Ω
Package Type:
WDFN8
Number of Elements per Chip:
1
Pin Count:
8
Rds On (Max) @ Id, Vgs:
2.25mOhm @ 20A, 10V
Detailed Description:
N-Channel 30V 28.3A (Ta), 162A (Tc) 3.2W (Ta), 107W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
2980pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Series:
Automotive, AEC-Q101
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
3.2W (Ta), 107W (Tc)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
28.3A (Ta), 162A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
