ON Semiconductor NVBLS1D7N08H

NVBLS1D7N08H ON Semiconductor
NVBLS1D7N08H
ON Semiconductor

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
241.3 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0017 Ω
Package Type:
H-PSOF8L
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
52 Weeks
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 80A, 10V
Detailed Description:
N-Channel 80V 33A (Ta), 241.3A (Tc) 4.4W (Ta), 237.5W (Tc) Surface Mount 8-HPSOF
Input Capacitance (Ciss) (Max) @ Vds:
7675pF @ 40V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 479µA
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
121nC @ 10V
Supplier Device Package:
8-HPSOF
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerSFN
Power Dissipation (Max):
4.4W (Ta), 237.5W (Tc)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 241.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NVBLS1D7N08H. It has a maximum of 80 v drain source voltage. While 241.3 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0017 ω maximum drain source resistance. The package is a sort of h-psof8l. It consists of 1 elements per chip. It contains 8 pins. It has typical 52 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 1.7mohm @ 80a, 10v. It features n-channel 80v 33a (ta), 241.3a (tc) 4.4w (ta), 237.5w (tc) surface mount 8-hpsof. The product's input capacitance at maximum includes 7675pf @ 40v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 4v @ 479µa. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 121nc @ 10v. 8-hpsof is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powersfn. The product carries maximum power dissipation 4.4w (ta), 237.5w (tc). The continuous current drain at 25°C is 33a (ta), 241.3a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - NVBLS1D7N08H(Technical Reference)
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NVBLS1D7N08H(Datasheets)

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