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This is manufactured by ON Semiconductor. The manufacturer part number is NTMT190N65S3H. It has a maximum of 650 v drain source voltage. While 16 a of maximum continuous drain current. The product is available in surface mount configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.19 ω maximum drain source resistance. The package is a sort of tdfn4. It consists of 1 elements per chip. It contains 8 pins. It has a maximum Rds On and voltage of 190mohm @ 8a, 10v. It features n-channel 650v 16a (tc) 129w (tc) surface mount 4-tdfn (8x8). The product's input capacitance at maximum includes 1600pf @ 400v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 4v @ 1.4ma. The product superfet® iii, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 31nc @ 10v. 4-tdfn (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 4-powertsfn. The product carries maximum power dissipation 129w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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