Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
110 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0076 Ω
Package Type:
PQFN
Number of Elements per Chip:
1
Pin Count:
8
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 48A, 10V
Detailed Description:
N-Channel 100V 14A (Ta), 110A (Tc) 3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
6180pF @ 50V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 254µA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
92nC @ 10V
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3W (Ta), 187W (Tc)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 110A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
