ON Semiconductor NTMFS008N12MCT1G

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
120 V
Maximum Continuous Drain Current:
79 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.02 Ω
Package Type:
SO
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
37 Weeks
Rds On (Max) @ Id, Vgs:
8mOhm @ 36A, 10V
Detailed Description:
N-Channel 120V 12A (Ta), 79A (Tc) 2.7W (Ta), 102W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
2705pF @ 60V
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 200µA
Drain to Source Voltage (Vdss):
120V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN, 5 Leads
Power Dissipation (Max):
2.7W (Ta), 102W (Tc)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 79A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS008N12MCT1G. It has a maximum of 120 v drain source voltage. While 79 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.02 ω maximum drain source resistance. The package is a sort of so. It consists of 1 elements per chip. It contains 8 pins. It has typical 37 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 8mohm @ 36a, 10v. It features n-channel 120v 12a (ta), 79a (tc) 2.7w (ta), 102w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 2705pf @ 60v. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The typical Vgs (th) (max) of the product is 4v @ 200µa. The product has a 120v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 33nc @ 10v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn, 5 leads. The product carries maximum power dissipation 2.7w (ta), 102w (tc). The continuous current drain at 25°C is 12a (ta), 79a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - NTMFS008N12MCT1G(Technical Reference)
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NTMFS008N12MC(Datasheets)

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