Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
263 A
Mounting Type:
Surface Mount
Channel Type:
P
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
0.0014 Ω
Package Type:
SO
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
52 Weeks
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 23A, 10V
Detailed Description:
P-Channel 30V 40.2A (Ta), 263A (Tc) 3.3W (Ta), 138.9W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
14950pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±25V
Gate Charge (Qg) (Max) @ Vgs:
217nC @ 4.5V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-PowerTDFN, 5 Leads
Power Dissipation (Max):
3.3W (Ta), 138.9W (Tc)
Current - Continuous Drain (Id) @ 25°C:
40.2A (Ta), 263A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
