Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
8 A
Mounting Type:
Surface Mount
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.6 Ω
Package Type:
DPAK
Number of Elements per Chip:
1
Pin Count:
3
Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 800V 8A (Tj) 60W (Tc) Surface Mount D-PAK (TO-252)
Vgs(th) (Max) @ Id:
3.8V @ 180µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
15.5nC @ 10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
725pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
D-PAK (TO-252)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Tj)
Customer Reference:
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
