ON Semiconductor FDT4N50NZU

FDT4N50NZU ON Semiconductor
ON Semiconductor

Product Information

Maximum Drain Source Voltage:
500 V
Maximum Continuous Drain Current:
2 A
Mounting Type:
Surface Mount
Series:
UniFET II
Channel Type:
N
Maximum Gate Threshold Voltage:
5.5V
Maximum Drain Source Resistance:
3 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Pin Count:
3
Rds On (Max) @ Id, Vgs:
3Ohm @ 1A, 10V
Detailed Description:
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
Input Capacitance (Ciss) (Max) @ Vds:
476pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Series:
UltraFRFET™, Unifet™ II
Vgs (Max):
±25V
Gate Charge (Qg) (Max) @ Vgs:
9.1nC @ 10V
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Power Dissipation (Max):
2W (Tc)
Drain to Source Voltage (Vdss):
500V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FDT4N50NZU. It has a maximum of 500 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The product unifet ii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.5v of maximum gate threshold voltage. It provides up to 3 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. It contains 3 pins. It has a maximum Rds On and voltage of 3ohm @ 1a, 10v. It features n-channel 500v 2a (tc) 2w (tc) surface mount sot-223 (to-261). The product's input capacitance at maximum includes 476pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. The product ultrafrfet™, unifet™ ii, is a highly preferred choice for users. The maximum Vgs rate is ±25v. The maximum gate charge and given voltages include 9.1nc @ 10v. sot-223 (to-261) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-261-4, to-261aa. The product carries maximum power dissipation 2w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - FDT4N50NZU(Technical Reference)
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FDT4N50NZU(Datasheets)

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