ON Semiconductor FCPF250N65S3R0L-F154

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
12 A
Mounting Type:
Through Hole
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.25 Ω
Package Type:
TO-220F
Number of Elements per Chip:
1
Pin Count:
3
Manufacturer Standard Lead Time:
23 Weeks
Detailed Description:
N-Channel 650V 12A (Tj) 31W (Tc) Through Hole TO-220F-3
Vgs(th) (Max) @ Id:
4.5V @ 290µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Rds On (Max) @ Id, Vgs:
250mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1010pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220F-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tj)
Customer Reference:
Power Dissipation (Max):
31W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FCPF250N65S3R0L-F154. It has a maximum of 650 v drain source voltage. While 12 a of maximum continuous drain current. The product is available in through hole configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.25 ω maximum drain source resistance. The package is a sort of to-220f. It consists of 1 elements per chip. It contains 3 pins. It has typical 23 weeks of manufacturer standard lead time. It features n-channel 650v 12a (tj) 31w (tc) through hole to-220f-3. The typical Vgs (th) (max) of the product is 4.5v @ 290µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 24nc @ 10v. It has a maximum Rds On and voltage of 250mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1010pf @ 400v. The product superfet® iii, is a highly preferred choice for users. to-220f-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tj). The product carries maximum power dissipation 31w (tc). This product use mosfet (metal oxide) technology.

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Datasheet - FCPF250N65S3R0L-F154(Technical Reference)
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FCPF250N65S3R0L-F154(Datasheets)

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