Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
90 A
Mounting Type:
Surface Mount
Series:
SCTH70N
Maximum Drain Source Resistance:
0.21 O
Maximum Gate Threshold Voltage:
4.9V
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.9V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
30mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SCTH70N120G2V-7 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/13986420
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
469W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3540 pF @ 800 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
