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This is manufactured by STMicroelectronics. The manufacturer part number is SCTWA90N65G2V-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sctwa90n65g2v-4, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.024 o maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 119 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 24mohm @ 50a, 18v. The maximum gate charge and given voltages include 157 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 565w (tc). The product's input capacitance at maximum includes 3380 pf @ 400 v. It has a long 52 weeks standard lead time. hip247™ long leads is the supplier device package value. The continuous current drain at 25°C is 119a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctwa90, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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