MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R

DMT10H4M5LPS-13 MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R
DiodesZetex

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
DMT10
Channel Type:
N
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.0062 Ω
Package Type:
PowerDI5060-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R manufactured by DiodesZetex. The manufacturer part number is DMT10H4M5LPS-13. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product dmt10, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.0062 ω maximum drain source resistance. The package is a sort of powerdi5060-8. It consists of 1 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - DMT10H4M5LPS-13(Technical Reference)

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