MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 2

DMN2005UFGQ-7 MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 2
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
DMN2005
Channel Type:
N
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
0.0087 Ω
Package Type:
PowerDI3333-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 2 manufactured by DiodesZetex. The manufacturer part number is DMN2005UFGQ-7. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product dmn2005, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.2v of maximum gate threshold voltage. It provides up to 0.0087 ω maximum drain source resistance. The package is a sort of powerdi3333-8. It consists of 1 elements per chip. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - DMN2005UFGQ-7(Technical Reference)

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You will get a confirmation email regarding your order of MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 2. You can also check on our website or by contacting our customer support team for further order details on MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 2.
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