Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3

SIZ998BDT-T1-GE3 Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
94.6 A
Channel Mode:
Enhancement
Series:
SiZ998BDT
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.00439 Ω
Package Type:
PowerPAIR 6 x 5
Number of Elements per Chip:
2
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET 94.6 A 30 V 8-Pin PowerPAIR 6 x 5 manufactured by Vishay. The manufacturer part number is SIZ998BDT-T1-GE3. It has a maximum of 30 v drain source voltage. While 94.6 a of maximum continuous drain current. The product carries enhancement channel mode. The product siz998bdt, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.00439 ω maximum drain source resistance. The package is a sort of powerpair 6 x 5. It consists of 2 elements per chip. It contains 8 pins.

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Datasheet - SIZ998BDT-T1-GE3(Technical Reference)

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