Dual N-Channel MOSFET, 101 A, 30 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF06DN-T1-GE3

SISF06DN-T1-GE3 Dual N-Channel MOSFET, 101 A, 30 V, 8-Pin PowerPAK 1212-8SCD Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SiSF06DN
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0045 Ω
Package Type:
PowerPAK 1212-8SCD
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
101 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET 101 A 30 V 8-Pin PowerPAK 1212-8SCD manufactured by Vishay. The manufacturer part number is SISF06DN-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sisf06dn, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0045 ω maximum drain source resistance. The package is a sort of powerpak 1212-8scd. It consists of 2 elements per chip. While 101 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - SISF06DN-T1-GE3(Technical Reference)

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