N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK Vishay SIHB125N60EF-GE3

SIHB125N60EF-GE3 N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK Vishay

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Product Information

Maximum Drain Source Voltage:

600 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

SiHB125N60EF

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.125 Ω

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Maximum Continuous Drain Current:

25 A

Pin Count:

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This is N-Channel MOSFET 25 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB125N60EF-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sihb125n60ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.125 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 25 a of maximum continuous drain current. It contains 3 pins.

Datasheet - SIHB125N60EF-GE3(Technical Reference)

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You can order Vishay brand products with SIHB125N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK Vishay SIHB125N60EF-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK Vishay SIHB125N60EF-GE3.

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SIHB125N60EF-GE3

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