N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 FULLPAK Vishay SIHA125N60EF-GE3

SIHA125N60EF-GE3 N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 FULLPAK Vishay

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Product Information

Maximum Drain Source Voltage:

600 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Series:

SiHA125N60EF

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.125 Ω

Package Type:

TO-220 FP

Number of Elements per Chip:

Maximum Continuous Drain Current:

11 A

Pin Count:

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This is N-Channel MOSFET 11 A 600 V 3-Pin TO-220 FULLPAK manufactured by Vishay. The manufacturer part number is SIHA125N60EF-GE3. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product siha125n60ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.125 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 11 a of maximum continuous drain current. It contains 3 pins.

Datasheet - SIHA125N60EF-GE3(Technical Reference)

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You can order Vishay brand products with SIHA125N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 FULLPAK Vishay SIHA125N60EF-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 FULLPAK Vishay SIHA125N60EF-GE3.

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SIHA125N60EF-GE3

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