Dual N-Channel MOSFET, 54 A, 60 V, 6-Pin PowerPAK SO-8L asymmetric Vishay SQJ264EP-T1_GE3

SQJ264EP-T1_GE3 Dual N-Channel MOSFET, 54 A, 60 V, 6-Pin PowerPAK SO-8L asymmetric Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SQJ264EP
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.02 Ω
Package Type:
PowerPAK SO-8L Dual
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
54 A
Pin Count:
6
RoHs Compliant
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This is Dual N-Channel MOSFET 54 A 60 V 6-Pin PowerPAK SO-8L asymmetric manufactured by Vishay. The manufacturer part number is SQJ264EP-T1_GE3. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sqj264ep, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.02 ω maximum drain source resistance. The package is a sort of powerpak so-8l dual. It consists of 2 elements per chip. While 54 a of maximum continuous drain current. It contains 6 pins.

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Datasheet - SQJ264EP-T1_GE3(Technical Reference)

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