N-Channel MOSFET, 4.4 A, 800 V, 3-Pin IPAK Vishay SIHU5N80AE-GE3

SIHU5N80AE-GE3 N-Channel MOSFET, 4.4 A, 800 V, 3-Pin IPAK Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
800 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
SiHU5N80AE
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
1.35 Ω
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4.4 A
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 4.4 A 800 V 3-Pin IPAK manufactured by Vishay. The manufacturer part number is SIHU5N80AE-GE3. It has a maximum of 800 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sihu5n80ae, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 1.35 ω maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 1 elements per chip. While 4.4 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - SIHU5N80AE-GE3(Technical Reference)

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