Dual N-Channel MOSFET, 33.4 A, 30 V, 9-Pin PowerPAIR 3 x 3 Vishay SiZ342ADT-T1-GE3

SiZ342ADT-T1-GE3 Dual N-Channel MOSFET, 33.4 A, 30 V, 9-Pin PowerPAIR 3 x 3 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
33.4 A
Channel Mode:
Enhancement
Series:
SiZ342ADT
Channel Type:
N
Maximum Gate Threshold Voltage:
2.4V
Maximum Drain Source Resistance:
0.0094 Ω
Package Type:
PowerPAIR 3 x 3
Number of Elements per Chip:
2
Pin Count:
9
RoHs Compliant
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This is Dual N-Channel MOSFET 33.4 A 30 V 9-Pin PowerPAIR 3 x 3 manufactured by Vishay. The manufacturer part number is SiZ342ADT-T1-GE3. It has a maximum of 30 v drain source voltage. While 33.4 a of maximum continuous drain current. The product carries enhancement channel mode. The product siz342adt, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.0094 ω maximum drain source resistance. The package is a sort of powerpair 3 x 3. It consists of 2 elements per chip. It contains 9 pins.

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Datasheet - SiZ342ADT-T1-GE3(Technical Reference)

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