N-Channel MOSFET, 60 A, 61 A, 80 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ260DT-T1-GE3

SiZ260DT-T1-GE3 N-Channel MOSFET, 60 A, 61 A, 80 V, 8-Pin PowerPAIR 3 x 3FDC Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
60 A, 61 A
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
N
Maximum Gate Threshold Voltage:
2.4V
Maximum Drain Source Resistance:
0.031 Ω, 0.031 Ω, 0.0245 Ω, 0.0247 Ω
Package Type:
PowerPAIR 3 x 3FDC
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 60 A 61 A 80 V 8-Pin PowerPAIR 3 x 3FDC manufactured by Vishay. The manufacturer part number is SiZ260DT-T1-GE3. It has a maximum of 80 v drain source voltage. While 60 a, 61 a of maximum continuous drain current. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.031 ω, 0.031 ω, 0.0245 ω, 0.0247 ω maximum drain source resistance. The package is a sort of powerpair 3 x 3fdc. It consists of 1 elements per chip. It contains 8 pins.

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Document- SiZ260DT-T1-GE3(Technical Reference)

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