N-Channel MOSFET, 38 A, 60 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ250DT-T1-GE3

SiZ250DT-T1-GE3 N-Channel MOSFET, 38 A, 60 V, 8-Pin PowerPAIR 3 x 3FDC Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
N
Maximum Gate Threshold Voltage:
2.4V
Maximum Drain Source Resistance:
0.0122 Ω, 0.0127 Ω, 0.01811 Ω, 0.01887 Ω
Package Type:
PowerPAIR 3 x 3FDC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
38 A
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 38 A 60 V 8-Pin PowerPAIR 3 x 3FDC manufactured by Vishay. The manufacturer part number is SiZ250DT-T1-GE3. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.0122 ω, 0.0127 ω, 0.01811 ω, 0.01887 ω maximum drain source resistance. The package is a sort of powerpair 3 x 3fdc. It consists of 2 elements per chip. While 38 a of maximum continuous drain current. It contains 8 pins.

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Document- SiZ250DT-T1-GE3(Technical Reference)

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