Name: SiZF360DT-T1-GE3, Vishay
Brand: Vishay
SKU: ET19996217
Price: 0.64 GBP
Availability: PreOrder

SiZF360DT-T1-GE3 Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay

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Product Information

Maximum Drain Source Voltage:

30 V

Maximum Continuous Drain Current:

80 A, 143 A

Channel Mode:

Enhancement

Series:

TrenchFET® Gen IV

Channel Type:

Maximum Gate Threshold Voltage:

2.2V

Maximum Drain Source Resistance:

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Package Type:

PowerPAIR 3 x 3FDC

Number of Elements per Chip:

Pin Count:

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This is Dual N-Channel MOSFET 80 A 143 A 30 V 6-Pin PowerPAIR 3 x 3FDC manufactured by Vishay. The manufacturer part number is SiZF360DT-T1-GE3. It has a maximum of 30 v drain source voltage. While 80 a, 143 a of maximum continuous drain current. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.0019 ω, 0.0026 ω, 0.0045 ω, 0.0075 ω maximum drain source resistance. The package is a sort of powerpair 3 x 3fdc. It consists of 2 elements per chip. It contains 6 pins.

Document- SiZF360DT-T1-GE3(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3.

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Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

SiZF360DT-T1-GE3

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