N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK Vishay SIHD6N80AE-GE3

SIHD6N80AE-GE3 N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
850 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.95 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3.2 A, 5 A
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 3.2 A 5 A 850 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SIHD6N80AE-GE3. It has a maximum of 850 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.95 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 3.2 a, 5 a of maximum continuous drain current. It contains 3 pins.

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Document- SIHD6N80AE-GE3(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK Vishay SIHD6N80AE-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK Vishay SIHD6N80AE-GE3.
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