N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3

SiSS32LDN-T1-GE3 N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
63 A
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
N
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.0072 Ω, 0.0095 Ω
Package Type:
PowerPAK 1212-8S
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 63 A 80 V 8-Pin PowerPAK 1212-8S manufactured by Vishay. The manufacturer part number is SiSS32LDN-T1-GE3. It has a maximum of 80 v drain source voltage. While 63 a of maximum continuous drain current. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.0072 ω, 0.0095 ω maximum drain source resistance. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. It contains 8 pins.

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Document- SiSS32LDN-T1-GE3(Technical Reference)

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