N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3

SiR680ADP-T1-RE3 N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
125 A
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.0035 Ω, 0.00288 Ω
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 125 A 80 V 8-Pin PowerPAK SO-8 manufactured by Vishay. The manufacturer part number is SiR680ADP-T1-RE3. It has a maximum of 80 v drain source voltage. While 125 a of maximum continuous drain current. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.0035 ω, 0.00288 ω maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 1 elements per chip. It contains 8 pins.

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Document- SiR680ADP-T1-RE3(Technical Reference)

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