Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay SiZ240DT-T1-GE3

Enrgtech Part No: ET19996209
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Manufacturer Part No:
SiZ240DT-T1-GE3
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Manufacturer: Vishay

SiZ240DT-T1-GE3 Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay

Product Information

Maximum Drain Source Voltage:

40 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET® Gen IV

Channel Type:

Maximum Gate Threshold Voltage:

2.4V

Maximum Drain Source Resistance:

0.0133 Ω, 0.00805 Ω, 0.00841 Ω, 0.01225 Ω

Package Type:

PowerPAIR 3 x 3S

Number of Elements per Chip:

Maximum Continuous Drain Current:

47 A, 48 A

Pin Count:

Checking for live stock

This is Dual N-Channel MOSFET 47 A 48 A 40 V 8-Pin PowerPAIR 3 x 3S manufactured by Vishay. The manufacturer part number is SiZ240DT-T1-GE3. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.0133 ω, 0.00805 ω, 0.00841 ω, 0.01225 ω maximum drain source resistance. The package is a sort of powerpair 3 x 3s. It consists of 2 elements per chip. While 47 a, 48 a of maximum continuous drain current. It contains 8 pins.

Document- SiZ240DT-T1-GE3(Technical Reference)

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Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay SiZ240DT-T1-GE3

SiZ240DT-T1-GE3

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