P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS63DN-T1-GE3

SiSS63DN-T1-GE3 P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET® Gen III
Channel Type:
P
Maximum Gate Threshold Voltage:
1.5V
Maximum Drain Source Resistance:
0.007 Ω, 0.0027 Ω, 0.0036 Ω
Package Type:
PowerPAK 1212-8S
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
127.5 A
Pin Count:
8
RoHs Compliant
Checking for live stock

This is P-Channel MOSFET 127.5 A 20 V 8-Pin PowerPAK 1212-8S manufactured by Vishay. The manufacturer part number is SiSS63DN-T1-GE3. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet® gen iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.5v of maximum gate threshold voltage. It provides up to 0.007 ω, 0.0027 ω, 0.0036 ω maximum drain source resistance. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. While 127.5 a of maximum continuous drain current. It contains 8 pins.

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Document- SiSS63DN-T1-GE3(Technical Reference)

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